Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation

Lin, C.A.C.A.LinChiu, H.C.H.C.ChiuChiang, T.H.T.H.ChiangLin, T.D.T.D.LinChang, Y.H.Y.H.ChangChang, W.H.W.H.ChangChang, Y.C.Y.C.ChangWang, W.-E.W.-E.WangDekoster, J.J.DekosterHoffmann, T.Y.T.Y.HoffmannMINGHWEI HONGKow, J.J.Kow2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443374Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivationjournal article10.1063/1.35543752-s2.0-79951795361https://www.scopus.com/inward/record.uri?eid=2-s2.0-79951795361&doi=10.1063%2f1.3554375&partnerID=40&md5=89dd55750ed4d0c034a8676db42639fd