GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxy

Lee, W.C.W.C.LeeLee, Y.J.Y.J.LeeKwo, J.J.KwoHsu, C.H.C.H.HsuLee, C.H.C.H.LeeWu, S.Y.S.Y.WuNg, H.M.H.M.NgMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443404GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxyjournal article10.1016/j.jcrysgro.2008.10.0932-s2.0-63549087803https://www.scopus.com/inward/record.uri?eid=2-s2.0-63549087803&doi=10.1016%2fj.jcrysgro.2008.10.093&partnerID=40&md5=75370af6f9a1d2b5be31e22b77384496