Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs

Dept. of Electr. Eng., National Taiwan Univ.CHEE-WEE LIUChang, S.T.S.T.ChangLiu, C.W.C.W.LiuLu, S.C.S.C.LuCHEE-WEE LIU2018-09-102018-09-102001http://www.scopus.com/inward/record.url?eid=2-s2.0-84961801685&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/293628application/pdf204354 bytesapplication/pdfEffect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTsconference paper10.1109/ISDRS.2001.984553