The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: Atomistic origin of planar defect formation

Das, C.R.C.R.DasDhara, S.S.DharaHsu, H.C.H.C.HsuChen, L.C.L.C.ChenJeng, Y.R.Y.R.JengBhaduri, A.K.A.K.BhaduriRaj, B.B.RajChen, K.H.K.H.ChenAlbert, S.K.S.K.Albert2020-06-182020-06-18200903770486https://scholars.lib.ntu.edu.tw/handle/123456789/503331The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: Atomistic origin of planar defect formationjournal article10.1002/jrs.2336