National Taiwan University Dept PhysChen, Horng-ShyangHorng-ShyangChenYeh, Dong-MingDong-MingYehLu, Yen-ChengYen-ChengLuChen, Cheng-YenCheng-YenChenHuang, Chi-FengChi-FengHuangTang, Tsung-YiTsung-YiTangYang, C.C.C.C.YangWu, Cen-ShawnCen-ShawnWuChen, Chii-DongChii-DongChen2006-11-142018-06-282006-11-142018-06-282006http://ntur.lib.ntu.edu.tw//handle/246246/2006111501211846Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography & inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL & time-resolved PL measurements & a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement & strain relaxation.application/pdf181049 bytesapplication/pdfzh-TWjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/2006111501211846/1/1339.pdf