李嗣涔Lee, Si-Chen臺灣大學:電子工程學研究所朱宜修Chu, Yi-ShiouYi-ShiouChu2010-07-142018-07-102010-07-142018-07-102009U0001-0608200912591400http://ntur.lib.ntu.edu.tw//handle/246246/189252在本論文中，首先探討非晶碳化矽薄膜的結構、光學及電學特性以便選擇非晶碳化矽太陽能電池的成長參數。接著利用此材料寬能矽的優點引入太陽能電池製程中作為太陽能電池的透光層以獲得更高的開路電壓。此外，為了提供足夠的電壓以便應用在電子元件的電源供應，我們成功的製造多層堆疊非晶碳化矽p-i-n太陽能電池。其兩層及三層堆疊非晶碳化矽p-i-n太陽能電池的開路電壓分別提升到1.54伏特及2.38伏特。接著，為了達到提供足夠開路電壓(ex.大於15伏特)的目的，我們成功串接了九顆pin-pin-pin非晶碳化矽太陽能電池並得到16.6伏特的高開路電壓，而在串接過程中開路電壓及短路電流造成的損失分別為12.5%及17.5%。The characteristics of a-SiC:H thin films, including structure, optical and electrical properties, were investigated first to choose the proper deposition parameters for solar cell fabrications in this thesis. Then it is introduced to the fabrication of amorphous silicon solar cells as the material of window layer to obtain higher open-circuit voltage due to its wide optical gap. Besides, to achieve sufficient open-circuit voltage solar cell as the power supply for electronic devices, the multi-junction tandem a-SiC:H p-i-n soalr cells are fabricated successfully. The open-circuit voltage of the double-junction and triple-junction tandem a-SiC:H solar cell could be increased to 1.54 V and 2.38 V, respectively. Furthermore, for the purpose to provide enough open-circuit voltage, ie 15V, for electronic devices, the processes of nine triple-junction solar cells connected in series have been developed. The open-circuit voltage is achieved to 16.6 V and the Voc and Jsc lost in series connection are 12.5 % and 17.5 %, respectively.Chapter 1ntroduction...............................................1hapter 2 Experiments................................................4.1 Deposition System – PECVD.............................4.2 Substrate Preparation..................................7.3 Deposition Procedures..................................8.3.1 PECVD................................................8.4 Measurement Techniques................................12.4.1 Film Thickness......................................12.4.2 Current-Voltage Characteristics.....................12.4.3 Transmittance and Reflectance.......................12.4.4 Spectral Response...................................16.4.5 Introduction of FTIR................................16hapter 3 Properties of hydrogenated amorphous iliconcarbide............................................18.1 Experiments...........................................18.2 Results and discussion................................21.2.1 Structure Properties of a-SiC:H.....................21.2.2 Optical Properties of a-SiC:H.......................26.2.3 Electrical Properties of a-SiC:H....................31.3 The comparison between a-SiC:H and a-Si:H solar cell..34.3.1 The Fabrication of p-i-n Solar Cell.................34.3.2 Current-Voltage Characteristics of a-SiC:H and a-Si:H p-i-n Solar Cell..........................................36hapter 4 Multi-junction a-SiC:H p-i-n Solar Cell.........42.1 The Optimum Design of Multi-junction Solar Cells......42.2 The fabrication processes of double-junction a-SiC:H p-i-n Solar Cell............................................46.3 Current-Voltage Characteristics of Tandem a-SiC:H p-i-n Solar Cell................................................49.4 Fabrication Process of Triple-junction a-SiC:H p-i-n Solar Cell................................................61.5 Current-Voltage Characteristics of Triple-junction a-SiC:H p-i-n Solar Cell....................................63.6 Nine triple-junction a-SiC:H p-i-n solar cells in series....................................................70.6.1 The Fabrication of Nine Triple-junction a-SiC:H Solar Cells in Series...........................................70.6.2 Results and Discussion..............................72hapter 5 Conclusions...............................................80eference.................................................821652208 bytesapplication/pdfen-US非晶碳化矽高開路電壓薄膜太陽能疊電池High Open-circuit VoltageTandema-SiC:HSolar Cellthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189252/1/ntu-98-R96943103-1.pdf