Chen, Ming-ChinMing-ChinChenLiao, M. C.M. C.LiaoLin, Hao-HsiungHao-HsiungLin2009-03-182018-07-062009-03-182018-07-061998https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032096796&doi=10.1016%2fS0022-0248%2898%2900059-1&partnerID=40&md5=dcd831d725334eceef4f8c9d0434ac2aIn this study, self-organized InAs quantum dots (QDs) were grown on (1 0 0) GaAs substrates with a 7° off-cut towards the (1 1 0) plane by using molecular beam epitaxy. QD with 2 ML nominal thickness grown on the vicinal substrate shows a 8.5 K photoluminescence line width of 27 meV and a dot density of 3 × 1011/cm2. © 1998 Elsevier Science B.V. All rights reserved.application/pdf246002 bytesapplication/pdfen-USGaAs; InAs; Misoriented substrate; Molecular beam epitaxy; Quantum dots[SDGs]SDG15Crystal orientation; Molecular beam epitaxy; Photoluminescence; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor growth; Substrates; Indium arsenide; Semiconductor quantum dotsjournal article10.1016/S0022-0248(98)00059-12-s2.0-0032096796http://ntur.lib.ntu.edu.tw/bitstream/246246/146025/1/14.pdf