H. W. WanY. T. ChengL. B. YoungC. K. ChengW. S. ChenY. H. G. LinC. H. HsuT. W. PiY. H. LinJ. KwoMINGHWEI HONG2024-10-232024-10-232023-04-17https://scholars.lib.ntu.edu.tw/handle/123456789/722322We have tailored high-κ /epi-Si/Ge and /InGaAs interfaces, whose electronic structures were elucidated based on our understanding of the surface electronic structures of Ge, SiGe, epi-Si/Ge, (In)GaAs. Low interface trap densities (Dit's) of (2-4)× 1011eV-1cm-2 and small charge trapping with a high acceleration factor γ=11 were achieved simultaneously in the Ge MOS. We have achieved record low subthreshold slopes (SS) of 22 mV/dec at 77K and Dit's in the high-κ /(In)GaAs planar InGaAs MOSFETs. Superconducting Al films epitaxially grown on sapphire have shown > 1M internal quality factor in the resonators.conference paper10.1109/vlsi-tsa/vlsi-dat57221.2023.10134236