Huang B.-WFu Z.-HKUN-YOU LIN2022-04-252022-04-252021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85118188953&doi=10.1109%2fRFIT52905.2021.9565282&partnerID=40&md5=0e39c123ebcba3d60d72c14f75bf56e5https://scholars.lib.ntu.edu.tw/handle/123456789/607239In this paper, a dual-band power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is presented. The concept of the optimal matching contour is used in the matching network design to minimize the loss in both operating frequency bands. Thus, this PA achieves good power performance in both frequency bands. The measured results of small-signal gain are 20/12 dB at 28/39 GHz, respectively. The saturated output power (Psat) is 21.9/22.7 dBm, the peak power-added efficiency (PAEmax) is 28.9/32.6%, and the OP1dB and corresponding PAE (PAE1dB) are 21.8/22.6 dBm and 28/32% at 28/39 GHz, respectively. ? 2021 IEEE.5G.dual-bandGaAsoptimal matching contourpower amplifier5G mobile communication systemsGallium arsenideIII-V semiconductorsPower amplifiers5g.Dual BandMatching networksMeasured resultsNetwork designOperating frequency bandsOptimal matchingOptimal matching contourPower performanceSmall signal gainSemiconducting gallium[SDGs]SDG7conference paper10.1109/RFIT52905.2021.95652822-s2.0-85118188953