Cowles JTran LHUEI WANGLin EBlock TStreit DOki A.2023-06-092023-06-0919961631918https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030410575&doi=10.1109%2fIEDM.1996.553567&partnerID=40&md5=30472982b6e8f298abb7d13b2f18ef3chttps://scholars.lib.ntu.edu.tw/handle/123456789/632490The first fundamental frequency W-band oscillator based on bipolar technology has been demonstrated. Using InP HBT MMIC technology with ft=70 GHz and fmax=185 GHz, the oscillator operated at 94.3 GHz with a 400 MHz tuning bandwidth delivering P0Ut=-8dBm. This technology enables compact, low noise tunable frequency sources targeting future millimeter-wave applications. ©© 1996 IEEE[SDGs]SDG7Heterojunction bipolar transistors; Indium phosphide; Millimeter waves; Monolithic microwave integrated circuits; Semiconducting indium phosphide; Fabrication; Millimeter waves; Molecular beam epitaxy; Monolithic microwave integrated circuits; Semiconducting indium phosphide; Semiconductor device structures; Variable frequency oscillators; Bipolar technology; Frequency source; Fundamental frequencies; HBT technology; InP-HBT; Lower noise; Millimeter-wave MMIC; MMIC technology; Tunable frequency; W bands; III-V semiconductors; Heterojunction bipolar transistors; Millimeter wave oscillator; W band oscillatorconference paper10.1109/IEDM.1996.5535672-s2.0-0030410575