Ton, T.-N.T.-N.TonTan, K.L.K.L.TanGarske, D.C.D.C.GarskeDow, G.S.G.S.DowBerenz, J.J.BerenzPospieszalski, M.W.M.W.PospieszalskiPan, S.-K.S.-K.PanHUEI WANG2020-06-042020-06-041993https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027677495&doi=10.1109%2f4.237511&partnerID=40&md5=5bc1af3e2fbe6e31e036131713b7b960This paper presents the development of 110-120-GHz monolithic low-noise amplifiers (LNA’s) using 0.1μm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNA’s have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band. To our knowledge, this is the first report of monolithic amplifiers operating above 100 GHz using three-terminal devices. © 1993 IEEE[SDGs]SDG7Gain control; High electron mobility transistors; Hybrid integrated circuits; Monolithic integrated circuits; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Signal to noise ratio; Monolithic low noise amplifiers; Pseuodomorphic high electron mobility transistors; Three terminal devices; Amplifiers (electronic)journal article10.1109/4.2375112-s2.0-0027677495