DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics

Lin, TTLinChang, PPChangChiu, HHChiuMINGHWEI HONGKwo, JJKwoLin, YYLinHsu, SSHsu2018-09-102018-09-102010http://scholars.lib.ntu.edu.tw/handle/123456789/357455DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectricsjournal article