Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode

CHIH-CHUNG YANGShen, K.-C.K.-C.ShenChen, G.-Y.G.-Y.ChenLu, Y.-C.Y.-C.LuLiao, C.-H.C.-H.LiaoChen, C.-Y.C.-Y.ChenHsieh, C.C.HsiehCHIH-CHUNG YANG2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-77957603816&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/356647Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diodeconference paper