Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels

Lin, M.-Y.M.-Y.LinChen, Y.-H.Y.-H.ChenWang, C.-H.C.-H.WangSu, C.-F.C.-F.SuChang, S.-W.S.-W.ChangLee, S.-C.S.-C.LeeLin, S.-Y.S.-Y.LinSI-CHEN LEE2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84900411648&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/387426Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channelsjournal article10.1063/1.4875583