Physical and memory characteristics of atomic-layer-deposited high-�e hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

Das, A.A.DasMaikap, S.S.MaikapLi, W.-C.W.-C.LiChang, L.-B.L.-B.ChangYang, J.-R.J.-R.YangJER-REN YANG2020-05-122020-05-122009https://scholars.lib.ntu.edu.tw/handle/123456789/491611Physical and memory characteristics of atomic-layer-deposited high-�e hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gatejournal article10.1143/JJAP.48.05DF022-s2.0-70249142512https://www.scopus.com/inward/record.uri?eid=2-s2.0-70249142512&doi=10.1143%2fJJAP.48.05DF02&partnerID=40&md5=83f4c9363b7d18319c8176b67b56ff84