High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

Dept. of Electr. Eng., National Taiwan Univ.Lin, Hao-HsiungHao-HsiungLinHuang, Chao-HsingChao-HsingHuang2007-04-192018-07-062007-04-192018-07-061992-04http://ntur.lib.ntu.edu.tw//handle/246246/2007041908562305application/pdf234968 bytesapplication/pdfen-US[SDGs]SDG7High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxyjournal article10.1109/ICIPRM.1992.235671http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041908562305/1/00235671.pdf