Chen, Y.-C.Y.-C.ChenTsai, T.-C.T.-C.TsaiTsai, J.-H.J.-H.TsaiTIAN-WEI HUANG2021-05-052021-05-0520190149645Xhttps://www.scopus.com/inward/record.url?eid=2-s2.0-85069959697&partnerID=40&md5=e0e292e9a210da10fc9dee92b047d123https://scholars.lib.ntu.edu.tw/handle/123456789/559252A 38-GHz-band transformer based high linear power amplifier with analog pre-distortion for wideband modulated signal in 65-nm GP CMOS process is presented in this paper. The output power is based on the two-way transformer current combining structure. The driver amplifier which is biased in deep class-AB acts as an AM-AM pre-distorter to produce better OP1dB and improve the third order intermodulation distortion (IMD3). Also a PMOS capacitor is used to compensate the AM-PM distortion of the input capacitor at the driver stage. In the continuous-wave measurement, this power amplifier achieves 14.4-dB small-signal power gain, 20.7-dBm PSAT, 35% PAEMAX, 20.2-dBm OP1dB, and 32.8% PAE1dB at 39 GHz. In the modulated signal measurement, this power amplifier achieves 13.2-dBm output power, 7.1% PAE, and EVM < -25 dBc at 1600-MHz channel bandwidth of 64-QAM OFDM with 38-GHz carrier frequency. The highest transmission data rate of the proposed power amplifier reaches up to 6.98 Gb/s. © 2019 IEEE.5G mobile communication; CMOS integrated circuits; millimeter wave integrated circuits; power amplifiers; predistortion; quadrature amplitude modulationBandwidth; CMOS integrated circuits; Millimeter waves; Orthogonal frequency division multiplexing; Quadrature amplitude modulation; Continuous wave measurements; Linear power amplifiers; Millimeter-wave integrated circuits; Mobile communications; Pre-distortion; Third order intermodulation distortion; Transmission bandwidth; Transmission data rate; Power amplifiersconference paper10.1109/mwsym.2019.87010802-s2.0-85069959697