A GSMBE Grown GaInP/GaAs Narrow Base DHBT Exhibiting N-Shape Negative Differential Resistance with Variable Peak-to-Valley Current Ratio up to 1 × 107 at Room Temperature

SHEY-SHI LU2018-09-102018-09-101994http://www.scopus.com/inward/record.url?eid=2-s2.0-0028375623&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309338A GSMBE Grown GaInP/GaAs Narrow Base DHBT Exhibiting N-Shape Negative Differential Resistance with Variable Peak-to-Valley Current Ratio up to 1 × 107 at Room Temperaturejournal article10.1109/55.285373