Lu C.-H.Chien S.-C.Lin S.-H.2019-05-132019-05-1320121546542Xhttps://scholars.lib.ntu.edu.tw/handle/123456789/407394Single-phased AgInSe 2 thin films were successfully prepared via depositing sol-gel derived precursors, followed by a selenization process. The pure-phased AgInSe 2 thin films were obtained at a selenization temperature as low as 400¢XC via adding the excess amount of In 3+ ions. Adjusting the In 3+/Ag + molar ratios can effectively prevent the formation of impurities Ag 2Se and AgIn 5Se 8 in thin films. A Raman spectrum indicated that the obtained films belonged to chalcopyrite structure. The optical absorption revealed that the obtained AgInSe 2 had the band gap of 1.23 eV. According to the GIXD analysis of the prepared films, the formation mechanism of AgInSe 2 thin films is proposed. Se vapor reacts with Ag to produce Ag 2Se at first, and then Se vapor subsequently reacts with In 2O 3 and Ag 2Se to form AgInSe 2. The sol-gel assisted route with a selenization process was demonstrated to be a potential way for preparing AgInSe 2 thin films with densified microstructures. ? 2012 The American Ceramic Society.[SDGs]SDG6journal article10.1111/j.1744-7402.2012.02779.x2-s2.0-84863836852https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863836852&doi=10.1111%2fj.1744-7402.2012.02779.x&partnerID=40&md5=c81eff5d5056847f792f434b1a05664f