An analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization

Dept. of Electr. Eng., National Taiwan Univ.Su, K.W.K.W.SuKuo, J.B.J.B.Kuo2007-04-192018-07-062007-04-192018-07-061995-10http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032073application/pdf202659 bytesapplication/pdfen-USAn analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionizationjournal article10.1109/ICSICT.1995.503361http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032073/1/00503361.pdf