Chang, Y.-W.Y.-W.ChangTsai, T.-C.T.-C.TsaiZhong, J.-Y.J.-Y.ZhongTsai, J.-H.J.-H.TsaiTIAN-WEI HUANG2021-05-052021-05-0520200149645Xhttps://www.scopus.com/inward/record.url?eid=2-s2.0-85094211718&partnerID=40&md5=272e33463984e043e20bf197315378b1https://scholars.lib.ntu.edu.tw/handle/123456789/559253This paper presents a bulk CMOS power amplifier targeting enhanced mobile broadband (eMBB) in 5G New Radio (5G NR). To realize a wideband OFDM and high linearity PA, a ladder-transformer network with second-order harmonic traps is proposed in this paper. Fabricated and designed in 28nm CMOS LP under 1 V supply, the two-staged PA is aimed at 28 GHz with class-AB operation. The designed PA measured continuous wave (CW) signal performance at 28 GHz with small-signal gain 18.5 dB, Psat 18.9 dBm and PAEmax 39.7%. As for modulated signal, with stringent 9.6dB PAPR 64-QAM OFDM signal, the PA supports up to 1.2GHz RFBW with high Pout, avg/P eof 9.3dBml10.3% and 4.32 Gb/s data rate. 5G-NR 64-QAM OFDM signals at 28GHz with non-contiguous 2CC scenarios are also shown in this paper. © 2020 IEEE.28 GHz; CMOS; Component carriers (CC); Fifth generation (5G) mobile; Orthogonal frequency division multiplexing (OFDM); Power amplifier[SDGs]SDG7Broadband amplifiers; CMOS integrated circuits; Orthogonal frequency division multiplexing; Power amplifiers; Continuous-wave signals; Efficient power; Harmonic trap; High linearity; Mobile broadband; Modulated signal; Second orders; Small signal gain; 5G mobile communication systemsconference paper10.1109/IMS30576.2020.92238642-s2.0-85094211718