Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

Dept. of Electr. Eng., National Taiwan Univ.Yu, C.-Y.C.-Y.YuChen, T.C.T.C.ChenLee, M.H.M.H.LeeHuang, S.-H.S.-H.HuangLee, L.S.L.S.LeeLiu, C.W.C.W.Liu2007-04-192018-07-062007-04-192018-07-062004-07N/Ahttp://ntur.lib.ntu.edu.tw//handle/246246/2007041910042837application/pdf224698 bytesapplication/pdfen-USElectrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporationjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910042837/1/01345578.pdf