Lee, K.-C.K.-C.LeeJENN-GWO HWU2018-09-102018-09-101996http://www.scopus.com/inward/record.url?eid=2-s2.0-0030562435&partnerID=MN8TOARSIn this paper, the irradiation-then-nitridation (ITN) method was suggested to prepare oxynitrides. After 60 Co 1 Mrad irradiation, oxides were nitrided in N 2 O to become oxynitrides. They are more radiation hard than those nitrided in N 2 O directly. The difference can be explained by assuming that ITN process introduces more nitrogen Si0 2 /Si interfaces and hence improves radiation hardness.Capacitors; Dielectric materials; Interfaces (materials); Irradiation; MOS devices; Nitriding; Nitrogen; Oxides; Radiation hardening; Semiconducting silicon; Semiconductor device manufacture; Silica; Irradiation then nitridation; MOS capacitors; Nitrided oxides; Oxynitrides; Radiation hardness; Nitrogen compoundsjournal article10.1016/0169-4332(95)00230-82-s2.0-0030562435