A velocity-overshoot capacitance model for 0.1 μm MOS transistors

Kuo, J.B.J.B.KuoChang, Y.W.Y.W.ChangLai, C.S.C.S.LaiYAO-WEN CHANG2020-06-162020-06-161996https://scholars.lib.ntu.edu.tw/handle/123456789/501918[SDGs]SDG7A velocity-overshoot capacitance model for 0.1 μm MOS transistorsjournal article10.1016/0038-1101(96)00028-72-s2.0-0030211488https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030211488&doi=10.1016%2f0038-1101%2896%2900028-7&partnerID=40&md5=28ca36e53360ebee404c1e419ead195d