Lin, C.W.C.W.LinWang, D.Y.D.Y.WangTai, Y.Y.TaiJiang, Y.T.Y.T.JiangChen, M.C.M.C.ChenChen, C.C.C.C.ChenYang, Y.J.Y.J.YangYANG-FANG CHEN2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-79960284454&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/362322Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment. © 2011 IOP Publishing Ltd.[SDGs]SDG7Band alignments; Bistables; Electrical bistable; matrix; Non-volatile memories; Nonvolatile memory devices; Organic/Inorganic hybrids; P-type; Poly-3-hexylthiophene; Space-charge-limited current; Spin-coating process; Alignment; Coatings; Heterojunctions; Nanocrystals; Optical bistability; Carrier mobilityjournal article10.1088/0022-3727/44/29/2920022-s2.0-79960284454WOS:000292383000002