Enhance AlGaN/GaN HEMTs electrical performance by using patterned sapphire substrate

Yi, C.-K.C.-K.YiChien, C.-Y.C.-Y.ChienChan, C.-T.C.-T.ChanPai, C.-W.C.-W.PaiCHIEH-HSIUNG KUAN2021-02-262021-02-262019https://www.scopus.com/inward/record.url?eid=2-s2.0-85067859621&partnerID=40&md5=942d60f5dbdf20c2a0ecede7611ff1d0https://scholars.lib.ntu.edu.tw/handle/123456789/549883[SDGs]SDG9Enhance AlGaN/GaN HEMTs electrical performance by using patterned sapphire substrateconference paper10.1145/3324033.33240392-s2.0-85067859621