Liu, An-ChenAn-ChenLiuHuang, Yu-MingYu-MingHuangSingh, Konthoujam JamesKonthoujam JamesSinghAhmed, TanveerTanveerAhmedLiou, Fang-JyunFang-JyunLiouLiou, Yu-HauYu-HauLiouTing, Chao-ChengChao-ChengTingLi, YimingYimingLiLin, Chien-ChungChien-ChungLinSamukawa, SeijiSeijiSamukawaKuo, Hao-ChungHao-ChungKuoCHIH-I WU2022-04-252022-04-25202119324510https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104190786&doi=10.1109%2fMNANO.2021.3066393&partnerID=40&md5=47c349b8e1fd10a90013eb62938b84a9https://scholars.lib.ntu.edu.tw/handle/123456789/606998MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency ? 2007-2011 IEEE.Atomic layer depositionEfficiencyEtchingDisplay technologiesElectronics manufacturersEtching processIII-NitrideMicrodisplaysSidewall effectsLight emitting diodesjournal article10.1109/MNANO.2021.30663932-s2.0-85104190786