Low interfacial trap density and sub-nm equivalent oxide thickness in In<inf>0.53</inf>Ga<inf>0.47</inf>As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> as gate dielectrics

Chu, L.K.L.K.ChuMerckling, C.C.MercklingAlian, A.A.AlianDekoster, J.J.DekosterKwo, J.J.KwoMINGHWEI HONGCaymax, M.M.CaymaxHeyns, M.M.Heyns2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443356Low interfacial trap density and sub-nm equivalent oxide thickness in In<inf>0.53</inf>Ga<inf>0.47</inf>As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> as gate dielectricsjournal article10.1063/1.36174362-s2.0-79961038335https://www.scopus.com/inward/record.uri?eid=2-s2.0-79961038335&doi=10.1063%2f1.3617436&partnerID=40&md5=293a5d6b140ead3b5afe88f592ec2182