Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics

Lin, T.D.T.D.LinChiu, H.C.H.C.ChiuChang, P.P.ChangChang, Y.H.Y.H.ChangLin, C.A.C.A.LinChang, W.H.W.H.ChangKwo, J.J.KwoTsai, W.W.TsaiMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443397http://scholars.lib.ntu.edu.tw/handle/123456789/349414Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectricsconference paper10.1109/ESSDERC.2009.53315572-s2.0-72849115240https://www.scopus.com/inward/record.uri?eid=2-s2.0-72849115240&doi=10.1109%2fESSDERC.2009.5331557&partnerID=40&md5=2086a0fe7bb5bc39e6b77d0e5e1dc3ad