Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF

M. H.LiaoM. H. LeeP.-G. ChenC. LiuK-Y. ChuC.-C. ChengM.-J. XieS.-N. LiuJ.-W. LeeS.-J. HuangM. TangK.-S. LiM.-C. Chen2019-03-112019-03-112015https://scholars.lib.ntu.edu.tw/handle/123456789/404541美國華盛頓Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFFconference proceedings