李嗣涔臺灣大學：電子工程學研究所王建凱Wang, Jiann-KaiJiann-KaiWang2007-11-272018-07-102007-11-272018-07-102007http://ntur.lib.ntu.edu.tw//handle/246246/57407本篇論文以VLS 機制於低壓化學氣相沈系統中成長矽奈米線(SiNW)。其次，在成長過程中外加電場來達到定位、定向的效果。最後，我們成功利用矽奈米線製備不摻雜和P 型場效電晶體，並量測矽奈米線場效電晶體的各種電性加以比較。The growth of silicon nanowires (SiNWs) with different diameters of Au nanoparticles as catalyst has been systematically investigated via vapor-liquid-solid (VLS) mechanism using the low pressure chemical vapor deposition. The electric-field-directed growth SiNWs were developed to orient the SiNW to grow in a fixed direction and to the designed position by Coulomb electric force. The SiNWs FET was fabricated successfully. Single crystal undoped and p-type SiNWs have been prepared and characterized by current-voltage measurements.摘要.............................................................................................................................. A Abstract.......................................................................................................................... B Contents ..........................................................................................................................Ⅰ Figure Captions..............................................................................................................Ⅲ Lists of Table...................................................................................................................Ⅶ 1. Chapter 1 Introduction.......................................................................................... 1 2. Chapter 2 Experimental ................................................................................... 5 2.1. Deposition System .................................................................................. 5 2.2. Preparation............................................................................................. 12 2.3. Deposition Procedures .......................................................................... 12 2.4. Device fabrication .................................................................................. 13 2.5. Measurement Techniques...................................................................... 13 2.5.1. Current – Voltage Characteristics............................................... 13 2.5.2. Thickness Measurement of Buffered SiO2.................................... 14 3. Chapter 3 The Electric-Field –Directed Growth of Silicon Nanowire .......... 15 3.1. Vapor-Liquid-Solid (VLS) Mechanism................................................ 16 3.1.1. VLS- assisted silicon nanowire growth ....................................... 16 3.1.2. The role of the metal catalyst........................................................ 21 3.1.3. Electric-Field-Directed Growth of Silicon Nanowire ……… 21 3.2. Sample Preparation ............................................................................... 25 3.3. Results and Discussion........................................................................... 29 3.3.1. The growth of undoped SiNW from double-sides...................... 29 3.3.1.1. The electric-field effect on the growth of 20 nm diameter undoped SiNW with double-side structure ............................ 31 3.3.1.2. The electric-field effect on the growth of 10 and 50 nm diameter undoped SiNW with double-side structure ............ 35 3.3.2. The growth of undopedSiNW with single-side structure .......... 41 4. Chapter 4 The Fabrication of SiNW Field Effect Transistor.............................48 4.1. Sample Preparation .............................................................................. 51 4.2. Results and Discussion.......................................................................... 54 4.2.1. The SiNW FET with diameter 20nm and 50 nm......................... 54 4.2.1.1. The I-V characteristics of 20 nm diameter SiNW FET....... 54 4.2.1.2. The I-V characteristics of 50 nm diameter SiNW FET ...... 59 4.2.2. The 10 nm diameter SiNW FET with different channel length. ...................................................................................................... 63 4.2.2.1. The ID-VDS characteristics of FETs with gate bias as an independent parameter ............................................................ 63 4.2.2.2. The IDs-VG characteristics of SiNW FETs with drain bias as an independent parameter....... 66 4.2.3. The SiNW FET with boron-doped 50 nm diameter SiNW......... 69 4.2.3.1. The ID-VDS characteristics of boron-doped FETs with gate bias as an independent parameter . ....... 69 4.2.3.2. The IDS-VG characteristics of boron-doped FETs with drain bias as an independent parameter . ....... 69 5. Chapter 5 Conclusions...........................................................................................73 Reference.....................................................................................................................7612159940 bytesapplication/pdfen-US矽奈米線SiNWthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57407/1/ntu-96-R93943136-1.pdf