Lin P.-TChang J.-WChang S.-RLi Z.-KChen W.-ZHuang J.-HJi Y.-ZHsueh W.-JHuang C.-Y.WEN-JENG HSUEH2021-08-052021-08-05202120734352https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102924795&doi=10.3390%2fcryst11030259&partnerID=40&md5=ad22ebcd763234f6d9c7a61d673e138bhttps://scholars.lib.ntu.edu.tw/handle/123456789/576865Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The Schottky barrier height (ΦB) is 0.65 eV for Pt/CP/n-Ge, which is a higher value than the value of 0.57 eV for conventional Pt/n-Ge. This demonstrates that the CP interlayer has a significant effect. The relevant junction mechanisms are illustrated using feasible energy level band diagrams. This strategy results in greater stability and enables a device to operate for more than 500 h under ambient conditions. This method realizes a highly stable Schottky contact for n-type Ge, which is an essential element of Ge-based high-speed electronics. ? 2021 by the authors. Licensee MDPI, Basel, Switzerland.journal article10.3390/cryst110302592-s2.0-85102924795