Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer

Chuang, C.C.ChuangCHI-TE LIANGKim, G.-H.G.-H.KimElmquist, R.E.R.E.ElmquistYang, Y.Y.YangHsieh, Y.P.Y.P.HsiehPatel, D.K.D.K.PatelWatanabe, K.K.WatanabeTaniguchi, T.T.TaniguchiAoki, N.N.Aoki2019-12-202019-12-202018https://scholars.lib.ntu.edu.tw/handle/123456789/436714Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layerjournal article10.1016/j.carbon.2018.04.0672-s2.0-85048479942https://www.scopus.com/inward/record.uri?eid=2-s2.0-85048479942&doi=10.1016%2fj.carbon.2018.04.067&partnerID=40&md5=ef7cd16cf9201ed0faf8d47f4e3853a8