Environmentally Friendly Resistive Switching Memory Devices with DNA as the Active Layer and Bio-Based Polyethylene Furanoate as the Substrate

Lam, J.-Y.J.-Y.LamJang, G.-W.G.-W.JangHuang, C.-J.C.-J.HuangSHIH-HUANG TUNGWEN-CHANG CHEN2021-02-042021-02-042020https://www.scopus.com/inward/record.url?eid=2-s2.0-85083818900&partnerID=40&md5=e38e2a8bb1e9c733e50de58eced5434ehttps://scholars.lib.ntu.edu.tw/handle/123456789/546533[SDGs]SDG12[SDGs]SDG15Environmentally Friendly Resistive Switching Memory Devices with DNA as the Active Layer and Bio-Based Polyethylene Furanoate as the Substratejournal article10.1021/acssuschemeng.9b071682-s2.0-85083818900WOS:000526363600013