劉致為臺灣大學：電機工程學研究所呂青寯Lu, Ching-ChunChing-ChunLu2007-11-262018-07-062007-11-262018-07-062007http://ntur.lib.ntu.edu.tw//handle/246246/53299本論文中，我們將探討場效電晶體技術發展中三種重要的議題：鍺通道蕭基位能障電晶體、金屬鍺化物、應用於互補式金氧半影像感測器透明膜玻璃切割技術。 藉由在矽基板上成長一層磊晶應變鍺，並在應變鍺上面成長矽保護層，如此的結構可實現鍺通道；而源/汲極則使用鉑金屬來形成P型電晶體的蕭基位能障。我們使用二道光罩的製程來製作元件，並且改善了先前一道光罩製程中的重大缺憾。這邊提供一些有用的概念以及參數的調整使製程的實行能夠更加完善。 用在以鍺為基底之場效電晶體的電極材質結構中，鎳鍺化合物因其多樣的優點而非常適合用作在以鍺為基底元件電極結構上。此外，我們也將說明在不同方向的鍺基底上會隨不同退火之溫度而形成不同鎳鍺化合物並討論之。 從實驗上，我們可確知透明膜玻璃在經過不同方法的雷射切割時必須做出取捨，並試著找出不同雷射切割方法的最佳化的參數，再由穿透率的量測來討論不同方法間的優劣特性。In this thesis, three important topics for discussion for advancement of metal-oxide-semiconductor field-effect transistors (MOSFETs) technology were studied, which are germanium channel Schottky-barrier MOSFETs, Germanide, and laser cutting technology of coated glass for complementary metal-oxide-semiconductor (CMOS) image sensors. Germanium channel was implemented by using Si-cap/ε-Ge/Si substrate and Platinum (Pt) was deposited as metal Schottky-barrier source/drain of p-type MOSFETs. The devices were fabricated by two mask process and overcame the series shortcomings from conventional one mask process. Some useful concepts and adjustments were also provided to improve the performance of the process. Formation of electrical contacts in Ge-based MOSFETs have been studied, nickel monogermanide (NiGe) is certainly advantageous for its use as contact material in Ge-based devices. The variation of Ni/Ge structure on different orientation substrate as a function of annealing temperature will be shown and discussed. From the experiment, it has been conferred the tradeoff of the coated glass by different laser cutting method. We will try to find the proper condition by different laser cutting method and discuss its effect on coated glass by the transmission spectrum.Abstract (in Chinese) Abstract (in English) Contents Lists of Tables List of Figures Chapter 1 Introduction 1.1 Motivation--------------------------------------1 1.1.1 Two mask process for Germanium channel Schottky-barrier pMOSFETs------------------------------------2 1.1.2 Temperature dependence of Nickel-Germanide formation------------------------------------------------------3 1.1.3 Laser cutting technique of coated glass for CMOS image sensor----------------------------------------4 1.2 Thesis Organization-----------------------------5 References------------------------------------------7 Chapter2 Two mask process for Germanium channel Schottky-barrier pMOSFETs 2.1 Introduction------------------------------------8 2.2 experiment--------------------------------------11 2.2.1 Characteristics of one mask and two mask process-13 2.2.2 Substrate fabrication -------------------------15 2.2.3 Lithography-----------------------------------18 2.2.4 Source/Drain metal deposition-----------------25 2.2.5 Metal lift-off--------------------------------26 2.2.6 Oxide etching---------------------------------29 2.3 Results and Discussion--------------------------29 2.3.1 SB pMOSFET fabricated on Si substrate---------29 2.3.2 SB pMOSFET fabricated on Si/ε-Ge/Si substrate-32 2.4 Conclusion--------------------------------------35 References------------------------------------------36 Chapter 3 Temperature dependence of Nickel-Germanide formation 3.1 Introduction------------------------------------38 3.2 Experiment--------------------------------------39 3.3 Results and Discussion--------------------------40 3.3.1 Sheet resistance------------------------------40 3.3.2 Phase identification--------------------------42 3.3.3 Surface roughness-----------------------------52 3.4 Conclusion--------------------------------------57 References------------------------------------------58 Chapter 4 Laser cutting technique of coated glass for CMOS image sensor 4.1 Introduction------------------------------------60 4.2 Experiment--------------------------------------61 4.2.1 Laser and coated glass substrate--------------61 4.2.2 Laser cutting method--------------------------62 4.2.3 Transmission measurement system---------------65 4.3 Results and Discussion--------------------------66 4.3.1 Surface fracturing analysis-------------------66 4.3.2 Compare parts separated with 200passes, 300passes, and 1000passes from laser cutting-------------------69 4.3.3 Transmission analysis-------------------------71 4.4 Conclusion--------------------------------------72 References------------------------------------------73 Chapter 5 Summary and Future Work 5.1 Summary-----------------------------------------74 5.2 Future Work-------------------------------------757780117 bytesapplication/pdfen-US場效電晶體蕭特基能障互補式金氧半電晶體金屬鍺化物透明膜玻璃MOSFETSchottky-barrierCMOSmonogermanidecoated glassthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/53299/1/ntu-96-J93921023-1.pdf