High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

CHIH-I WU2021-09-022021-09-02202007431562https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098112157&doi=10.1109%2fVLSITechnology18217.2020.9265040&partnerID=40&md5=71bc7a9e9997d1a1767da472582ede7chttps://scholars.lib.ntu.edu.tw/handle/123456789/580704We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um. ? 2020 IEEE.Layered semiconductors; Molybdenum compounds; Monolayers; VLSI circuits; Gate length; Gate oxide; K omegas; On currents; Subthreshold swing; Hafnium compoundsHigh On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Dopingconference paper10.1109/VLSITechnology18217.2020.92650402-s2.0-85098112157