Yeh, Jiun-LinJiun-LinYehChen, Hsuen-LiHsuen-LiChenShih, AnAnShihLee, Si-ChenSi-ChenLee2008-12-312018-06-282008-12-312018-06-28199900135194http://ntur.lib.ntu.edu.tw//handle/246246/95606http://ntur.lib.ntu.edu.tw/bitstream/246246/95606/1/06.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0033351897&doi=10.1049%2fel%3a19991361&partnerID=40&md5=0daf6826a5440e13a7a3b018e946a15cIt is shown that an Si nanocluster is formed in an amorphous silicon (a-Si) thin film following irradiation using a pulsed KrF excimer laser. The photoluminescence spectrum of the irradiated 70 nm thick a-Si film at a power density of 180 mJ/cm2 at one shot shows two luminescence bands centred at approx. 1.31 and 1.76eV. The peak emission wavelength depends on the silicon nanocluster size, which is approx. 3-4 nm. A mechanism for the formation of Si nanoclusters is also proposed.Annealing; Excimer lasers; Irradiation; Nanotechnology; Photoluminescence; Porous silicon; Pulsed laser applications; Spectrum analysis; Thin films; Amorphous silicon thin films; Excimer laser annealing; Luminescence bands; Power density; Silicon nanoclusters; Amorphous siliconjournal article10.1049/el:199913612-s2.0-0033351897http://ntur.lib.ntu.edu.tw/bitstream/246246/95606/1/06.pdf