Dynamic bias instability of p-channel polycrystalline-silicon thin-film transistors induced by impact ionization

CHEE-WEE LIUHuang, C.-F.C.-F.HuangSun, H.-C.H.-C.SunYang, Y.-J.Y.-J.YangChen, Y.-T.Y.-T.ChenKu, C.-Y.C.-Y.KuLiu, C.W.C.W.LiuHsu, Y.-J.Y.-J.HsuShih, C.-C.C.-C.ShihChen, J.-S.J.-S.ChenCHEE-WEE LIU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-67349245159&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/350490Dynamic bias instability of p-channel polycrystalline-silicon thin-film transistors induced by impact ionizationjournal article10.1109/LED.2009.2013644