Suppression of GeO x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Wang C.-I.Chang T.-J.Wang C.-Y.Yin Y.-T.Shyue J.-J.HSIN-CHIH LINMIIN-JANG CHEN2019-11-272019-11-27201920462069https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059872274&doi=10.1039%2fc8ra07652a&partnerID=40&md5=fc87f18d31b4777c15ff9a191e83d304https://scholars.lib.ntu.edu.tw/handle/123456789/432406Suppression of GeO x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devicesjournal article10.1039/c8ra07652a2-s2.0-85059872274