2009-08-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/679973摘要：本研究計畫使用原子層沉積(Atomic Layer Deposition, ALD)技術以及電漿輔助原子層沉積(plasma-enhanced ALD, PEALD)技術來成長高品質ZnO/MgxZn1-xO磊晶薄膜與量子井結構，並研究其光學性質。ALD技術是以逐層的方式成長材料，並具有自限成膜(self-limiting)的特性，因此其精密度可達一個原子層。由於ALD技術擁具有良好的薄膜厚度與材料成份的控制能力，因此適合運用於成長三元材料之磊晶薄膜與量子井結構。本計畫主要研究之主題為：(1)於藍寶石基板上成長高品質之MgxZn1-xO磊晶薄膜，(2)藉由成長MgxZn1-xO磊晶薄膜於SCAM基板上作為緩衝層以成長高品質之ZnO磊晶薄膜，(3)成長MgxZn1-xO/ZnO/MgxZn1-xO多重量子井，(4)製作n型MgxZn1-xO/ZnO/p型AlxGaN1-xN多重量子井發光二極體，(5)成長高品質MgxZn1-xO薄膜於玻璃基板上以製作金屬-絕緣體-半導體 (metal-Insulator-Semiconductor, MIS)紫外光穿隧發光二極體。本計畫將探討在ZnO/MgxZn1-xO磊晶薄膜與多重量子井中激子(exciton)的量子侷限效應、以及受激放射(stimulated emission)與光學益增(optical gain)等現象。我們將使用高解析度穿透式電子顯微鏡(High-Resolution Transmission Electron Microscopy, HRTEM)與X光繞射儀(X-ray diffraction, XRD)來觀察ZnO/MgxZn1-xO磊晶薄膜與量子井之晶體結構，並在室溫及低溫下使用photoluminescence (PL)與photoluminescence excitation (PLE) 技術量測ZnO/MgxZn1-xO磊晶薄膜與量子井的光學性質與量子化的電子能階結構。此外，本計畫將利用variable stripe length (VSL)的方式量測ZnO/MgxZn1-xO磊晶薄膜與多重量子井的光學益增。我們將使用n型MgxZn1-xO/ZnO/p型AlxGa1-xN多重量子井結構來實現在室溫下紫外光發光二極體。最後，本計畫亦將藉由MIS結構製作以玻璃為基板之MgxZn1-xO紫外光穿隧發光二極體。<br> Abstract: In this project, the optical properties of high-quality ZnO/MgxZn1-xO epilayers and quantum wells grown by the conventional thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) techniques will be studied. The accurate composition control and layer-by-layer growth of ALD make it a very appropriate for the growth of ternary-alloy epilayers and quantum wells with abrupt interfaces. We will focus on the following topics: (1) High-quality MgxZn1-xO epilayer on the sapphire substrate, (2) High-quality ZnO epilayer by inserting a MgxZn1-xO buffer layer on the SCAM substrate, (3) MgxZn1-xO/ZnO/MgxZn1-xO multiple quantum wells (MQWs), (4) N-type MgxZn1-xO/ZnO/p-type AxlGa1-xN multiple quantum wells (MQWs) light-emitting diodes, and (5) Ultraviolet (UV) light emission from MgxZn1-xO-based metal-insulator-semiconductor (MIS) tunneling diodes on the glass substrate. The stimulated emission and optical gain, and the localization and quantum confinement of excitons in the ZnO/MgxZn1-xO epilayers and quantum wells will be investigated. The crystalline structure of the ZnO/MxZn1-xO epilayers and quantum wells will be characterized by high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Photoluminescence (PL) and photoluminescence excitation (PLE) measurement will be conducted to study the optical properties and confined electronic states in the MgxZn1-xO/ZnO/MgxZn1-xO MQWs. The optical gain in the ZnO/MgxZn1-xO layers and MQWs will be measured using the variable stripe length (VSL) configuration. The UV electroluminescence from the ZnO/MgxZn1-xO layers and quantum wells will be achieved using the MIS tunneling diode on the glass substrate and n-MgxZn1-xO/ZnO/p-AlxGa1-xN MQWs.原子層沉積技術氧化鋅氧化鋅鎂量子井發光二極體Atomic layer deposition (ALD)Zinc Oxide (ZnO)Zinc Magnesium Oxide (ZnMgO)Quantum wellLight emitting diode