Carrier relaxation in InGaN/GaN quantum wells with nanometer-scale cluster structures

CHIH-CHUNG YANGWang, H.-C.H.-C.WangLin, S.-C.S.-C.LinLu, Y.-C.Y.-C.LuCheng, Y.-C.Y.-C.ChengYang, C.C.C.C.YangMa, K.-J.K.-J.MaCHIH-CHUNG YANG2018-09-102018-09-102004http://www.scopus.com/inward/record.url?eid=2-s2.0-4544259049&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/307831Carrier relaxation in InGaN/GaN quantum wells with nanometer-scale cluster structuresjournal article10.1063/1.1784033