Lu C.-H.Chen Y.-C.Sun Y.-C.2019-05-132019-05-13200209599428https://scholars.lib.ntu.edu.tw/handle/123456789/407471The crystallization of electroceramic thin films derived from amorphous precursor films has been significantly enhanced by using a high vapor-pressure annealing process as low as 350¢XC. This method not only considerably reduces the thermal budget and energy consumption during film processing, but also alleviates the interdiffusion between films and substrates.[SDGs]SDG7article; crystallization; diffusion; energy; film; low temperature; precursor; pressure; vapor pressurejournal article10.1039/b202186m2-s2.0-0036276322https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036276322&doi=10.1039%2fb202186m&partnerID=40&md5=5847ce66319bc9340e2f4f6c8b3ddbd3