DC and RF characteristics of submicron gate FET's formed by micromachined V-groove technology

Ho, Nien-ShowNien-ShowHoSHEY-SHI LU2018-09-102018-09-101999http://www.scopus.com/inward/record.url?eid=2-s2.0-0033349689&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/350424DC and RF characteristics of submicron gate FET's formed by micromachined V-groove technologyconference paper