Chen, Song EnSong EnChenWang, Chih ChungChih ChungWangHsu, Hung WeiHung WeiHsuWu, Yen TingYen TingWuJIA-HAN LI2023-07-242023-07-242023-01-0197815106609910277786Xhttps://scholars.lib.ntu.edu.tw/handle/123456789/634114Understanding the electromagnetic properties of the 3D through silicon via (TSV) with high aspect ratio is important for the 3D IC stacking and packaging. The electromagnetic simulations were used to explore the TSV with different model parameters, such as top critical dimension, bottom critical dimension, hole depth, sidewall slope, sidewall roughness, curvature of the base, and light wavelength. A model is proposed to parameterize TSV structure features. The simulation results corresponding to these model parameters are discussed.deep ultraviolet (DUV) | finite-difference time-domain (FDTD) | rigorous coupled-wave analysis (RCWA) | through silicon via (TSV)conference paper10.1117/12.26578182-s2.0-85163346300https://api.elsevier.com/content/abstract/scopus_id/85163346300