Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

Lin, T.D.T.D.LinChang, Y.H.Y.H.ChangLin, C.A.C.A.LinHuang, M.L.M.L.HuangLee, W.C.W.C.LeeKwo, J.J.KwoMINGHWEI HONG2012-10-192018-06-282012-10-192018-06-282012http://ntur.lib.ntu.edu.tw//handle/246246/242877en-USRealization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-depositionjournal article10.1063/1.4706261http://ntur.lib.ntu.edu.tw/bitstream/246246/242877/-1/09.pdf