2015-06-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/707211摘要：本計畫主要想要與晶元光電合作並開發氮化鎵系統高速可見光發光電晶體，並用於未來可見光通訊中，將由實驗室提供結構設計，合作廠商提供雷射的磊晶成長和材料校正的服務，並交由實驗室做製程及量測，藉此來提升可見光發光電晶體的元件特性、光輸出頻寬及功率損耗，更可將發光電晶體由學術界應用到產業界上，帶動國內可見光通訊產業的發展。 可見光通訊將是下一代的新興產業，但傳輸速率遭到發光二極體本身受限，現今市面上的可見發光二極體，由於光直接調變頻寬大約只能到數十MHz，若能將可見光的自發光元件直接調變速度提升到數百MHz，將能使可見光通訊領域更進一大步，我們將利用可見發光電晶體的開發來達成這個目標。發光電晶體為一種全新的三端半導體元件，它繼承了電晶體快速的優點和半導體復合發光的特性，能同時輸出「電」訊號和「光」訊號，同時能讓自發光的直接調變速度快過原本的發光二極體。 目前國內有製造發光二極體技術成熟的廠商，但對於n-p-n及p-n-p結構的發光電晶體的成長技術仍有待成長。因此將藉由此計畫與晶元光電共同開發可見光波段的發光電晶體，共同調整材料參數和元件特性，讓發光電晶體成為更快速、穩定、可見光光源，並用於高速可見光通訊中。 <br> Abstract: This project is mainly proposed to cooperate with Epistar to investigate GaN-based high speed visible light-emitting transistors (LET) used in the visible light communication system in the future. The laboratory provides the epitaxy design and the cooperation company provides epitaxy growth of wafer and material calibration. Then, our group accomplishes light-emitting transistor process and does the measurement. By improving electrical characteristic, optical bandwidth and power consumption, this project will lead visible LET from academia towards ournational visible optical communication industry. Visible light communication will be the next generation newable industry. However, the transmission speed is limited by the led itself. The direct modulation optical bandwidths of visible LEDs available in the market are just about tens of MHz. If we can let the direct modulation speed of the visible light-emitting device achieve to hundreds of MHz, the progress of the visible light communication can be anticipated. We will develop the visible light-emitting transistors to achieve this goal. The light-emitting transistor is a brand new three-terminal devices and inherit the merits of both the high-speed characteristic in the transistors and radiative recombination in the semiconductors. The LET can output electrical and optical signals at the same time. Meanwhile, the direct modulation optical response in the LET is faster than in the original LED. There are only companies with matured light-emitting diodes technique, but npn and pnp light-emitting transistors are still open for investigation. As a result, this project is proposed to cooperate with Epistar to develop visible light-emitting transistors. By adjusting material parameters and device performance, we want to make LET a faster and stable light source used in the visible light communication in the future market.發光電晶體可見光通訊氮化鎵發光電晶體Light-emitting transistorvisible light communicationGaN light-emitting transistor