An analysis of the bias dependence of scattering parameters S11 and S22 of SiGe heterojunction bipolar transistors (HBTs)

SHEY-SHI LU2018-09-102018-09-102004http://www.scopus.com/inward/record.url?eid=2-s2.0-4444264550&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309330An analysis of the bias dependence of scattering parameters S11 and S22 of SiGe heterojunction bipolar transistors (HBTs)conference paper