Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric

Yang, B.B.YangYe, P.D.P.D.YeKwo, J.J.KwoFrei, M.R.M.R.FreiGossmann, H.-J.L.H.-J.L.GossmannMannaerts, J.P.J.P.MannaertsSergent, M.M.SergentMINGHWEI HONGNg, K.K.NgBude, J.J.Bude2019-12-272019-12-272002https://scholars.lib.ntu.edu.tw/handle/123456789/443472Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectricconference paper10.1109/MBE.2002.10378222-s2.0-84968655937https://www.scopus.com/inward/record.uri?eid=2-s2.0-84968655937&doi=10.1109%2fMBE.2002.1037822&partnerID=40&md5=ada72b9bc4918c872beb0c8aa2ace133