Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy

Wang, Jyh-ShyangJyh-ShyangWangLin, Hao-HsiungHao-HsiungLinHAO-HSIUNG LIN2018-09-102018-09-101999-01http://scholars.lib.ntu.edu.tw/handle/123456789/351805application/pdfapplication/pdfGrowth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxyjournal article10.1116/1.5908602-s2.0-22844453756WOS:000083129900016