Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides

Lu, H.-W.H.-W.LuHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84901639242&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/385257Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxidesjournal article10.1007/s00339-013-7873-2